PCDH2065CCGC_T0_00601 Panjit International Inc.
Виробник: Panjit International Inc.
Description: DIODE ARR SIC 650V 10A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
| Кількість | Ціна |
|---|---|
| 1+ | 381.78 грн |
| 30+ | 207.85 грн |
| 120+ | 172.63 грн |
| 510+ | 137.77 грн |
| 1020+ | 132.35 грн |
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Технічний опис PCDH2065CCGC_T0_00601 Panjit International Inc.
Description: DIODE ARR SIC 650V 10A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-247AD, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Інші пропозиції PCDH2065CCGC_T0_00601
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
PCDH2065CCGC_T0_00601 | Panjit |
SiC Schottky Diodes 650V SiC Schottky Barrier Diode |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 384A Leakage current: 0.1mA Power dissipation: 90W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| PCDH2065CCGC_T0_00601 |
|
Виробник: Panjit
SiC Schottky Diodes 650V SiC Schottky Barrier Diode
SiC Schottky Diodes 650V SiC Schottky Barrier Diode
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| PCDH2065CCGC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.