| Кількість | Ціна |
|---|---|
| 1+ | 915.67 грн |
| 10+ | 523.57 грн |
| 120+ | 454.58 грн |
| 1020+ | 453.88 грн |
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Технічний опис PCDH4065CCG1_T0_00601 Panjit
Description: 650V SIC SCHOTTKY BARRIER DIODE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A (DC), Supplier Device Package: TO-247AD, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 120 µA @ 650 V.
Інші пропозиції PCDH4065CCG1_T0_00601 за ціною від 524.49 грн до 916.75 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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PCDH4065CCG1_T0_00601 | Panjit International Inc. |
 Description: 650V SIC SCHOTTKY BARRIER DIODEPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A (DC) Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 120 µA @ 650 V |
на замовлення 1495 шт: термін постачання 21-31 дні (днів) |
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| PCDH4065CCG1_T0_00601 |
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Виробник: Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 916.75 грн |
| 10+ | 777.42 грн |
| 100+ | 672.35 грн |
| 500+ | 571.82 грн |
| 1000+ | 524.49 грн |