PCDP0665G1_T0_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 228pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 1992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.3 грн |
| 50+ | 157.05 грн |
| 100+ | 134.6 грн |
| 500+ | 112.29 грн |
| 1000+ | 96.14 грн |
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Технічний опис PCDP0665G1_T0_00001 Panjit International Inc.
Description: DIODE SIL CARB 650V 6A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 228pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Інші пропозиції PCDP0665G1_T0_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| PCDP0665G1_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO220AC Kind of package: tube Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 57.7W кількість в упаковці: 1 шт |
товар відсутній |
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PCDP0665G1_T0_00001 | Виробник : Panjit |
Schottky Diodes & Rectifiers 650V SiC Schottky Barrier Diode |
товар відсутній |
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| PCDP0665G1_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO220AC Kind of package: tube Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 57.7W |
товар відсутній |