Технічний опис PCDP1265G1_T0_00001 Panjit
Description: DIODE SIL CARB 650V 12A TO220AC, Current - Reverse Leakage @ Vr: 80 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 452pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Інші пропозиції PCDP1265G1_T0_00001 за ціною від 147.23 грн до 334.73 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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PCDP1265G1_T0_00001 | Panjit International Inc. |
 Description: DIODE SIL CARB 650V 12A TO220ACCurrent - Reverse Leakage @ Vr: 80 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 12A Capacitance @ Vr, F: 452pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| PCDP1265G1_T0_00001 |
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Виробник: Panjit International Inc.
Description: DIODE SIL CARB 650V 12A TO220AC
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 452pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 650V 12A TO220AC
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 452pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 334.73 грн |
| 10+ | 270.58 грн |
| 100+ | 218.91 грн |
| 500+ | 182.61 грн |
| 1000+ | 156.36 грн |
| 2000+ | 147.23 грн |