PCFFS08120AF onsemi
Виробник: onsemi
Description: DIODE SIL CARBIDE 1.2KV 8A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV 8A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: Die
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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Технічний опис PCFFS08120AF onsemi
Description: DIODE SIL CARBIDE 1.2KV 8A DIE, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 8A, Supplier Device Package: Die, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 20 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Інші пропозиції PCFFS08120AF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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PCFFS08120AF | Виробник : onsemi |
 Diodes - General Purpose, Power, Switching Silicon Carbide (SiC) Schottky Diode - EliteSiC, 8 A, 1200 V, D1, Die Silicon Carbide (SiC) Schottky Diode - EliteSiC, 8 A, 1200 V, D1, Die |
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