Технічний опис PCFFS10120AF ONN
Description: DIODE SIL CARBIDE 1.2KV 10A DIE, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: Die, Current - Average Rectified (Io): 10A, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tray.
Інші пропозиції PCFFS10120AF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| PCFFS10120AF | onsemi |
Description: DIODE SIL CARBIDE 1.2KV 10A DIE Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: Die Current - Average Rectified (Io): 10A Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: Die Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | |
 |
PCFFS10120AF | onsemi |
 Diodes - General Purpose, Power, Switching Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D1, Die Silicon Carbide (SiC) Schottky Diode - EliteSiC, 15 A, 1200 V, D1, Die |
товару немає в наявності |
В кошику од. на суму грн. |
| PCFFS10120AF |
Виробник: onsemi
Description: DIODE SIL CARBIDE 1.2KV 10A DIE
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: Die
Current - Average Rectified (Io): 10A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tray
Description: DIODE SIL CARBIDE 1.2KV 10A DIE
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: Die
Current - Average Rectified (Io): 10A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| PCFFS10120AF |
|
Виробник: onsemi
Diodes - General Purpose, Power, Switching Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D1, Die Silicon Carbide (SiC) Schottky Diode - EliteSiC, 15 A, 1200 V, D1, Die
Diodes - General Purpose, Power, Switching Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D1, Die Silicon Carbide (SiC) Schottky Diode - EliteSiC, 15 A, 1200 V, D1, Die
товару немає в наявності
В кошику
од. на суму грн.