PCFFS4065AF onsemi

Description: DIODE SIL CARBIDE 650V 40A DIE, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1989pF @ 1V, 100kHz, Current - Average Rectified (Io): 40A, Supplier Device Package: Die, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.