PD57030S-E STMicroelectronics
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Current - Test: 50 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Supplier Device Package: PowerSO-10RF (Straight Lead)
Technology: LDMOS
Gain: 14dB
Power - Output: 30W
Frequency: 945MHz
Current Rating (Amps): 4A
Package / Case: PowerSO-10 Exposed Bottom Pad
Packaging: Tube
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Технічний опис PD57030S-E STMicroelectronics
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 65V; 4A; 52.8W; PowerSO10RF, Efficiency: 53%, Drain current: 4A, Open-loop gain: 14dB, Gate-source voltage: ±20V, Output power: 30W, Power dissipation: 52.8W, Drain-source voltage: 65V, Frequency: 945MHz, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: PowerSO10RF, Kind of transistor: RF, Electrical mounting: SMT, Kind of package: tube, Polarisation: unipolar.
Інші пропозиції PD57030S-E
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PD57030S-E | STMicroelectronics |
RF MOSFET Transistors POWER R.F. |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. |
 |
PD57030S-E | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 65V; 4A; 52.8W; PowerSO10RF Efficiency: 53% Drain current: 4A Open-loop gain: 14dB Gate-source voltage: ±20V Output power: 30W Power dissipation: 52.8W Drain-source voltage: 65V Frequency: 945MHz Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerSO10RF Kind of transistor: RF Electrical mounting: SMT Kind of package: tube Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. |
| PD57030S-E |
|
Виробник: STMicroelectronics
RF MOSFET Transistors POWER R.F.
RF MOSFET Transistors POWER R.F.
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| PD57030S-E |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 65V; 4A; 52.8W; PowerSO10RF
Efficiency: 53%
Drain current: 4A
Open-loop gain: 14dB
Gate-source voltage: ±20V
Output power: 30W
Power dissipation: 52.8W
Drain-source voltage: 65V
Frequency: 945MHz
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Kind of transistor: RF
Electrical mounting: SMT
Kind of package: tube
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 65V; 4A; 52.8W; PowerSO10RF
Efficiency: 53%
Drain current: 4A
Open-loop gain: 14dB
Gate-source voltage: ±20V
Output power: 30W
Power dissipation: 52.8W
Drain-source voltage: 65V
Frequency: 945MHz
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Kind of transistor: RF
Electrical mounting: SMT
Kind of package: tube
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.