Технічний опис PD57060-E STMicroelectronics
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 65V; 7A; 79W; PowerSO10RF; SMT, Polarisation: unipolar, Case: PowerSO10RF, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: tube, Kind of transistor: RF, Electrical mounting: SMT, Power dissipation: 79W, Drain current: 7A, Open-loop gain: 14.3dB, Gate-source voltage: ±20V, Efficiency: 54%, Output power: 60W, Drain-source voltage: 65V, Frequency: 945MHz.
Інші пропозиції PD57060-E
| Фото | Назва | Виробник | Інформація |
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Ціна |
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PD57060-E | Виробник : STMicroelectronics |
 Trans RF MOSFET N-CH 65V 7A 3-Pin PowerSO-10RF (Formed lead) Tube |
товару немає в наявності |
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PD57060-E | Виробник : STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO10 Current - Test: 100 mA Voltage - Test: 28 V Voltage - Rated: 65 V Part Status: Active Supplier Device Package: 10-PowerSO Technology: LDMOS Gain: 14.3dB Power - Output: 60W Frequency: 945MHz Current Rating (Amps): 7A Package / Case: PowerSO-10 Exposed Bottom Pad Packaging: Tube |
товару немає в наявності |
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PD57060-E | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 65V; 7A; 79W; PowerSO10RF; SMT Polarisation: unipolar Case: PowerSO10RF Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Kind of transistor: RF Electrical mounting: SMT Power dissipation: 79W Drain current: 7A Open-loop gain: 14.3dB Gate-source voltage: ±20V Efficiency: 54% Output power: 60W Drain-source voltage: 65V Frequency: 945MHz |
товару немає в наявності |