PDTA113ZMB,315 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q100
на замовлення 239250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11181+ | 1.98 грн |
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Технічний опис PDTA113ZMB,315 Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V, Supplier Device Package: DFN1006B-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Qualification: AEC-Q100.
Інші пропозиції PDTA113ZMB,315
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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PDTA113ZMB,315 | Виробник : Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V Supplier Device Package: DFN1006B-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q100 |
товар відсутній |
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PDTA113ZMB,315 | Виробник : Nexperia |
Bipolar Transistors - Pre-Biased PDTA113ZMB/SOT883B/XQFN3 |
товар відсутній |