PDTA123EE,115

PDTA123EE,115 NXP USA Inc.


PDTA123E_SERIES.pdf
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SC-75
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
на замовлення 80363 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна
8876+2.26 грн
Мінімальне замовлення: 8876
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Технічний опис PDTA123EE,115 NXP USA Inc.

Description: TRANS PREBIAS PNP 50V 0.1A SC75, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Obsolete, Supplier Device Package: SC-75, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V, Resistors Included: R1 and R2.

Інші пропозиції PDTA123EE,115

Фото Назва Виробник Інформація Доступність
Ціна
PDTA123EE,115 PDTA123EE,115 NXP USA Inc. PDTA123E_SERIES.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
PDTA123EE,115 PDTA123EE,115 NXP USA Inc. PDTA123E_SERIES.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
товару немає в наявності
В кошику  од. на суму  грн.
PDTA123EE,115 PDTA123E_SERIES.pdf
PDTA123EE,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
PDTA123EE,115 PDTA123E_SERIES.pdf
PDTA123EE,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
товару немає в наявності
В кошику  од. на суму  грн.