Продукція > NEXPERIA USA INC. > PDTA123YQB-QZ

PDTA123YQB-QZ Nexperia USA Inc.

Name: PDTA123YQB-QZ
Brand: Nexperia
SKU: 46535554-4
Price: 368.64 UAH
Availability: BackOrder

Виробник: Nexperia USA Inc.
Description: PDTA123YQB-Q/SOT8015/DFN1110D-
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2

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В кошику од. на суму грн.

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Технічний опис PDTA123YQB-QZ Nexperia USA Inc.

Description: PDTA123YQB-Q/SOT8015/DFN1110D-, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V, Supplier Device Package: DFN1110D-3, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 340 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Qualification: AEC-Q101, Resistors Included: R1 and R2.

Інші пропозиції PDTA123YQB-QZ

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	PDTA123YQB-QZ	Виробник : Nexperia	Bipolar Transistors - BJT 50 V, 100 mA PNP resistor-equipped transistor; R1 = 2.2 kâ„¦, R2: 10 kâ„¦	товару немає в наявності	В кошику од. на суму грн.