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Технічний опис PDTC114YT,215 Nexperia
Description: TRANS PREBIAS NPN 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Resistors Included: R1 and R2.
Інші пропозиції PDTC114YT,215
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| PDTC114YT,215 | NXP |
TRANS PREBIAS NPN 250MW TO236AB Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
| PDTC114YT,215 | NXP/Nexperia/We-En |
Транзистор цифровий smd, Структура = NPN, Uceo, В = 50, Ic, А = 0,1, hFE = 100 @ 5 мA, 5 В, Icutoff-max = 1 мкА, Ptot, Вт = 0,25, R1, кОм = 10, R2, кОм = 47, Uceo(sat), В @ Ic, Ib = 0,1 @ 250 мкA, 5 мА, Тексп, °С = -65...+150,... Транзистори Корпус: SOT-2 кількість в упаковці: 10000 шт |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
 |
PDTC114YT,215 | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
|
PDTC114YT,215 | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PDTC114YT,215 | NXP USA Inc. |
Description: TRANS PREBIAS NPN 250MW TO236AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PDTC114YT,215 | Nexperia |
Digital Transistors The factory is currently not accepting orders for this product. |
товару немає в наявності |
В кошику од. на суму грн. |
  |
PDTC114YT,215 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 230MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. |
| PDTC114YT,215 |
|
Виробник: NXP
TRANS PREBIAS NPN 250MW TO236AB Транзистори
TRANS PREBIAS NPN 250MW TO236AB Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| PDTC114YT,215 |
|
Виробник: NXP/Nexperia/We-En
Транзистор цифровий smd, Структура = NPN, Uceo, В = 50, Ic, А = 0,1, hFE = 100 @ 5 мA, 5 В, Icutoff-max = 1 мкА, Ptot, Вт = 0,25, R1, кОм = 10, R2, кОм = 47, Uceo(sat), В @ Ic, Ib = 0,1 @ 250 мкA, 5 мА, Тексп, °С = -65...+150,... Транзистори Корпус: SOT-2
кількість в упаковці: 10000 шт
Транзистор цифровий smd, Структура = NPN, Uceo, В = 50, Ic, А = 0,1, hFE = 100 @ 5 мA, 5 В, Icutoff-max = 1 мкА, Ptot, Вт = 0,25, R1, кОм = 10, R2, кОм = 47, Uceo(sat), В @ Ic, Ib = 0,1 @ 250 мкA, 5 мА, Тексп, °С = -65...+150,... Транзистори Корпус: SOT-2
кількість в упаковці: 10000 шт
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PDTC114YT,215 |
|
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PDTC114YT,215 |
|
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
| PDTC114YT,215 |
|
Виробник: Nexperia
Digital Transistors The factory is currently not accepting orders for this product.
Digital Transistors The factory is currently not accepting orders for this product.
товару немає в наявності
В кошику
од. на суму грн.
| PDTC114YT,215 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.