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PDTC123EE,115 NXP

PDTC123E_SERIES.pdf
Виробник: NXP
Цифровой транзистор 2.2/2.2 кОм, SC-75-3, SOT-416 Транзистори
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Технічний опис PDTC123EE,115 NXP

Description: TRANS PREBIAS NPN 50V 0.1A SC75, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Obsolete, Supplier Device Package: SC-75, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).

Інші пропозиції PDTC123EE,115

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
PDTC123EE,115 PDTC123EE,115 NXP USA Inc. PDTC123E_SERIES.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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В кошику  од. на суму  грн.
PDTC123EE,115 PDTC123EE,115 NXP USA Inc. PDTC123E_SERIES.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Resistors Included: R1 and R2
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
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PDTC123EE,115 PDTC123EE,115 Nexperia PDTC123E_SERIES-1599446.pdf Bipolar Transistors - Pre-Biased NPN W/RES 50V
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PDTC123EE,115 PDTC123E_SERIES.pdf
PDTC123EE,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
PDTC123EE,115 PDTC123E_SERIES.pdf
PDTC123EE,115
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Resistors Included: R1 and R2
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-75
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
товару немає в наявності
В кошику  од. на суму  грн.
PDTC123EE,115 PDTC123E_SERIES-1599446.pdf
PDTC123EE,115
Виробник: Nexperia
Bipolar Transistors - Pre-Biased NPN W/RES 50V
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В кошику  од. на суму  грн.