PDTC123YT-QR Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 1880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.11 грн |
| 48+ | 6.42 грн |
| 100+ | 3.98 грн |
| 500+ | 2.71 грн |
| 1000+ | 2.38 грн |
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Технічний опис PDTC123YT-QR Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R1 and R2.
Інші пропозиції PDTC123YT-QR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PDTC123YT-QR | Виробник : NEXPERIA |
Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin SOT-23 |
товару немає в наявності |
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PDTC123YT-QR | Виробник : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
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PDTC123YT-QR | Виробник : Nexperia |
Digital Transistors NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ |
товару немає в наявності |