PDTC124XMB,315 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q100
Resistors Included: R1 and R2
на замовлення 9754 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 17.51 грн |
| 30+ | 10.27 грн |
| 100+ | 6.41 грн |
| 500+ | 4.41 грн |
| 1000+ | 3.89 грн |
| 2000+ | 3.44 грн |
| 5000+ | 2.92 грн |
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Технічний опис PDTC124XMB,315 Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V, Supplier Device Package: DFN1006B-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 230 MHz, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Grade: Automotive, Qualification: AEC-Q100, Resistors Included: R1 and R2.
Інші пропозиції PDTC124XMB,315
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PDTC124XMB,315 | Виробник : NEXPERIA |
Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin DFN-B T/R |
товару немає в наявності |
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PDTC124XMB,315 | Виробник : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V Supplier Device Package: DFN1006B-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q100 Resistors Included: R1 and R2 |
товару немає в наявності |
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PDTC124XMB,315 | Виробник : Nexperia |
Digital Transistors PDTC124XMB/SOT883B/XQFN3 |
товару немає в наявності |