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PDTD123EQA147

PDTD123EQA147 NXP USA Inc.

PDTD113_123_143_114EQA_SER.pdf
Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 210 MHz
Power - Max: 940 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Packaging: Bulk
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8219+3.00 грн
Мінімальне замовлення: 8219
В кошику  од. на суму  грн.
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Технічний опис PDTD123EQA147 NXP USA Inc.

Description: TRANS PREBIAS, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 210 MHz, Power - Max: 940 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Grade: Automotive, Supplier Device Package: DFN1010D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Packaging: Bulk.