Продукція > NXP USA INC. > PDTD123EU115
PDTD123EU115

PDTD123EU115 NXP USA Inc.

PDTD1XXXU_SER.pdf
Виробник: NXP USA Inc.
Description: TRANS PREBIAS
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 225 MHz
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
на замовлення 24860 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8036+3.00 грн
Мінімальне замовлення: 8036
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис PDTD123EU115 NXP USA Inc.

Description: TRANS PREBIAS, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 225 MHz, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Grade: Automotive, Supplier Device Package: SOT-323, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk.