Технічний опис PE4728L1Q-AU_R1_002A1 Panjit
Category: Protection diodes - arrays, Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1, Type of diode: TVS, Mounting: SMD, Case: DFN1610-2, Semiconductor structure: unidirectional, Breakdown voltage: 30V, Max. forward impulse current: 27.5A, Application: automotive industry, Max. off-state voltage: 28V, Leakage current: 1µA, Capacitance: 0.23nF, Number of channels: 1.
Інші пропозиції PE4728L1Q-AU_R1_002A1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| PE4728L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1 Type of diode: TVS Mounting: SMD Case: DFN1610-2 Semiconductor structure: unidirectional Breakdown voltage: 30V Max. forward impulse current: 27.5A Application: automotive industry Max. off-state voltage: 28V Leakage current: 1µA Capacitance: 0.23nF Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| PE4728L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Breakdown voltage: 30V
Max. forward impulse current: 27.5A
Application: automotive industry
Max. off-state voltage: 28V
Leakage current: 1µA
Capacitance: 0.23nF
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Breakdown voltage: 30V
Max. forward impulse current: 27.5A
Application: automotive industry
Max. off-state voltage: 28V
Leakage current: 1µA
Capacitance: 0.23nF
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.