PESD5V0V1BLD,315 NXP Semiconductors
| Кількість | Ціна без ПДВ |
|---|---|
| 3741+ | 9.46 грн |
| 10000+ | 8.43 грн |
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Технічний опис PESD5V0V1BLD,315 NXP Semiconductors
Description: TVS DIODE 5VWM 12.5VC DFN1006D-2, Packaging: Tape & Reel (TR), Package / Case: 2-XDFN, Mounting Type: Surface Mount, Wettable Flank, Type: Zener, Operating Temperature: -55°C ~ 150°C (TA), Capacitance @ Frequency: 11pF @ 1MHz, Current - Peak Pulse (10/1000µs): 4.8A (8/20µs), Voltage - Reverse Standoff (Typ): 5V (Max), Supplier Device Package: DFN1006D-2, Bidirectional Channels: 1, Voltage - Breakdown (Min): 5.8V, Voltage - Clamping (Max) @ Ipp: 12.5V, Power - Peak Pulse: 45W, Power Line Protection: No, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PESD5V0V1BLD,315
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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PESD5V0V1BLD,315 | Nexperia USA Inc. |
 Description: TVS DIODE 5VWM 12.5VC DFN1006D-2Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 11pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN1006D-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 12.5V Power - Peak Pulse: 45W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
|
|
PESD5V0V1BLD,315 | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 12.5VC DFN1006D-2 Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Capacitance @ Frequency: 11pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN1006D-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 12.5V Power - Peak Pulse: 45W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PESD5V0V1BLD,315 | Nexperia |
ESD Protection Diodes / TVS Diodes PESD5V0V1BLD/SOD882D/DFN1006-2 |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. |
| PESD5V0V1BLD,315 | NEXPERIA |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 45W; 5.8÷7.8V; 4.8A; bidirectional Type of diode: TVS Version: ESD Peak pulse power dissipation: 45W Max. off-state voltage: 5V Breakdown voltage: 5.8...7.8V Max. forward impulse current: 4.8A Semiconductor structure: bidirectional Case: DFN1006D-2; SOD882D Mounting: SMD Leakage current: 10nA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| PESD5V0V1BLD,315 |
|
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 12.5VC DFN1006D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006D-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 45W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 12.5VC DFN1006D-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006D-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 45W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PESD5V0V1BLD,315 |
|
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 12.5VC DFN1006D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006D-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 45W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 12.5VC DFN1006D-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006D-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 45W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PESD5V0V1BLD,315 |
|
Виробник: Nexperia
ESD Protection Diodes / TVS Diodes PESD5V0V1BLD/SOD882D/DFN1006-2
ESD Protection Diodes / TVS Diodes PESD5V0V1BLD/SOD882D/DFN1006-2
товару немає в наявності
Мінімальне замовлення: 12 шт
В кошику
од. на суму грн.
| PESD5V0V1BLD,315 |
|
Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 45W; 5.8÷7.8V; 4.8A; bidirectional
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 45W
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Max. forward impulse current: 4.8A
Semiconductor structure: bidirectional
Case: DFN1006D-2; SOD882D
Mounting: SMD
Leakage current: 10nA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 45W; 5.8÷7.8V; 4.8A; bidirectional
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 45W
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Max. forward impulse current: 4.8A
Semiconductor structure: bidirectional
Case: DFN1006D-2; SOD882D
Mounting: SMD
Leakage current: 10nA
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.