PH3330L,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
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Технічний опис PH3330L,115 NXP USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel.
Інші пропозиції PH3330L,115
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PH3330L,115 | Nexperia |
 MOSFET TRENCH-3 |
товару немає в наявності |
В кошику од. на суму грн. |