PH3830L,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 98A LFPAK56
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
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Технічний опис PH3830L,115 NXP USA Inc.
Description: MOSFET N-CH 30V 98A LFPAK56, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 98A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669.
Інші пропозиції PH3830L,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PH3830L,115 | NXP USA Inc. |
Description: MOSFET N-CH 30V 98A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| PH3830L,115 |
|
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 98A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 98A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.