PHB11N06LT,118 NXP USA Inc.
Виробник: NXP USA Inc.Description: MOSFET N-CH 55V 10.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
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Технічний опис PHB11N06LT,118 NXP USA Inc.
Description: MOSFET N-CH 55V 10.3A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 5.5A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V.
Інші пропозиції PHB11N06LT,118
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PHB11N06LT,118 | Виробник : NXP Semiconductors |
MOSFET TAPE13 PWR-MOS |
товару немає в наявності |