PHB146NQ06LT,118 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5675 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Технічний опис PHB146NQ06LT,118 NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 5675 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції PHB146NQ06LT,118
| Фото | Назва | Виробник | Інформація |
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Ціна |
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PHB146NQ06LT,118 | NXP USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5675 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
товару немає в наявності |
В кошику од. на суму грн. |
| PHB146NQ06LT,118 |
|
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5675 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Description: MOSFET N-CH 55V 75A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5675 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
товару немає в наявності
В кошику
од. на суму грн.