PHB20N06T,118 NEXPERIA
Виробник: NEXPERIACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 81A
Case: D2PAK; SOT404
Drain-source voltage: 55V
Drain current: 14.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 62W
Polarisation: unipolar
на замовлення 790 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 53.65 грн |
| 8+ | 44.7 грн |
| 23+ | 35.29 грн |
| 63+ | 33.21 грн |
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Технічний опис PHB20N06T,118 NEXPERIA
Description: MOSFET N-CH 55V 20.3A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 483 pF @ 25 V.
Інші пропозиції PHB20N06T,118 за ціною від 39.77 грн до 55.7 грн
| Фото | Назва | Виробник | Інформація |
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PHB20N06T,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W Mounting: SMD Kind of package: reel; tape Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 81A Case: D2PAK; SOT404 Drain-source voltage: 55V Drain current: 14.3A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 62W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 790 шт: термін постачання 7-14 дні (днів) |
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PHB20N06T,118 | Виробник : NEXPERIA |
Trans MOSFET N-CH 55V 20.3A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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PHB20N06T,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 20.3A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 483 pF @ 25 V |
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PHB20N06T,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 20.3A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 483 pF @ 25 V |
товар відсутній |
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PHB20N06T,118 | Виробник : Nexperia |
MOSFET RAIL MOSFET |
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