PHB66NQ03LT,118 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 25V 66A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
на замовлення 8543 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 689+ | 29.34 грн |
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Технічний опис PHB66NQ03LT,118 Nexperia USA Inc.
Description: MOSFET N-CH 25V 66A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V, Power Dissipation (Max): 93W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V.
Інші пропозиції PHB66NQ03LT,118 за ціною від 55.75 грн до 95.02 грн
| Фото | Назва | Виробник | Інформація |
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PHB66NQ03LT,118 | Виробник : Nexperia |
MOSFET TAPE13 MOSFET |
на замовлення 4408 шт: термін постачання 21-30 дні (днів) |
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PHB66NQ03LT,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 93W; D2PAK,SOT404 Drain-source voltage: 25V Drain current: 45A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 93W Polarisation: unipolar Kind of package: reel; tape Case: D2PAK; SOT404 Features of semiconductor devices: logic level Gate charge: 3.6nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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PHB66NQ03LT,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 66A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
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PHB66NQ03LT,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 66A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
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PHB66NQ03LT,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 93W; D2PAK,SOT404 Drain-source voltage: 25V Drain current: 45A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 93W Polarisation: unipolar Kind of package: reel; tape Case: D2PAK; SOT404 Features of semiconductor devices: logic level Gate charge: 3.6nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |