PHD108NQ03LT,118 NXP Semiconductors
| Кількість | Ціна |
|---|---|
| 334+ | 105.75 грн |
| 500+ | 95.17 грн |
| 1000+ | 87.77 грн |
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Технічний опис PHD108NQ03LT,118 NXP Semiconductors
Description: MOSFET N-CH 25V 75A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V.
Інші пропозиції PHD108NQ03LT,118
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
PHD108NQ03LT,118 | NXP USA Inc. |
 Description: MOSFET N-CH 25V 75A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PHD108NQ03LT,118 | Nexperia |
MOSFET TAPE13 PWR-MOS |
товару немає в наявності |
В кошику од. на суму грн. |
| PHD108NQ03LT,118 |
|
Виробник: NXP USA Inc.
Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
Description: MOSFET N-CH 25V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
товару немає в наявності
В кошику
од. на суму грн.
| PHD108NQ03LT,118 |
|
Виробник: Nexperia
MOSFET TAPE13 PWR-MOS
MOSFET TAPE13 PWR-MOS
товару немає в наявності
В кошику
од. на суму грн.