PHD36N03LT,118

Код товара: 169241
Производитель:
Электронные компоненты и комплектующие - Other components 3

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Техническое описание PHD36N03LT,118

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PHD36N03LT,118
PHD36N03LT,118
Производитель: NXP USA Inc.
Description: MOSFET N-CH 30V 43.4A DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 43.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Power Dissipation (Max): 57.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: PHD36
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PHD36N03LT,118
PHD36N03LT,118
Производитель: NXP Semiconductors
Description: MOSFET N-CH 30V 43.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 43.4A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Power - Max: 57.6W
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