PHD66NQ03LT,118 NXP USA Inc.

Description: MOSFET N-CH 25V 66A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 93W (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).