PHK04P02T,518 Nexperia USA Inc.

Description: TRANSISTORS>100MHZ, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 12.8 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 16 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 600mV @ 1mA (Typ), Power Dissipation (Max): 5W (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.66A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.