Технічний опис PHK28NQ03LT,518
Description: MOSFET N-CH 30V 23.7A 8SO, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 30.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 6.25W (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 23.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції PHK28NQ03LT,518
| Фото | Назва | Виробник | Інформація |
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PHK28NQ03LT,518 | Виробник : NXP USA Inc. |
Description: MOSFET N-CH 30V 23.7A 8SOMounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 30.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 6.25W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 23.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
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PHK28NQ03LT,518 | Виробник : Nexperia |
MOSFET TAPE13 PWR-MOS |
товару немає в наявності |




