PHN203,518 NXP Semiconductors

Description: MOSFET 2N-CH 30V 6.3A 8SO, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V, Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: 8-SO.