PJA138K-AU_R1_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.11 грн |
| 6000+ | 2.78 грн |
| 9000+ | 2.30 грн |
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Технічний опис PJA138K-AU_R1_000A1 Panjit International Inc.
Description: SOT-23, MOSFET N-CHANNEL, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Grade: Automotive, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції PJA138K-AU_R1_000A1 за ціною від 2.46 грн до 18.60 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PJA138K-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 1864 шт: термін постачання 14-30 дні (днів) |
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PJA138K-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET N-CHANNELQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Grade: Automotive Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 24454 шт: термін постачання 21-31 дні (днів) |
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PJA138K-AU_R1_000A1 | Panjit |
MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected |
на замовлення 5039 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PJA138K-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1864 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.29 грн |
| 80+ | 5.22 грн |
| 112+ | 3.71 грн |
| 500+ | 2.82 грн |
| 1000+ | 2.46 грн |
| PJA138K-AU_R1_000A1 |
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Виробник: Panjit International Inc.
Description: SOT-23, MOSFET N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: SOT-23, MOSFET N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 24454 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.60 грн |
| 25+ | 12.24 грн |
| 100+ | 5.96 грн |
| 500+ | 4.67 грн |
| 1000+ | 3.24 грн |
| PJA138K-AU_R1_000A1 |
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Виробник: Panjit
MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
на замовлення 5039 шт:
термін постачання 21-30 дні (днів)




