PJA3400_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
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Технічний опис PJA3400_R1_00001 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 4.9A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V.
Інші пропозиції PJA3400_R1_00001 за ціною від 4.66 грн до 24.11 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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PJA3400_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.9A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V |
на замовлення 7984 шт: термін постачання 21-31 дні (днів) |
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PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.9A Gate charge: 5.7nC On-state resistance: 60mΩ Power dissipation: 1.25W Gate-source voltage: ±12V Pulsed drain current: 19.6A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape |
на замовлення 2671 шт: термін постачання 14-30 дні (днів) |
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PJA3400_R1_00001 | Panjit |
MOSFETs 30V N-Channel Enhancement Mode MOSFET |
на замовлення 2447 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PJA3400_R1_00001 |
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Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
на замовлення 7984 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.92 грн |
| 25+ | 12.24 грн |
| 100+ | 7.62 грн |
| 500+ | 5.27 грн |
| 1000+ | 4.66 грн |
| PJA3400_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
на замовлення 2671 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.11 грн |
| 31+ | 13.76 грн |
| 100+ | 8.54 грн |
| 500+ | 6.22 грн |
| 1000+ | 5.39 грн |
| PJA3400_R1_00001 |
|
Виробник: Panjit
MOSFETs 30V N-Channel Enhancement Mode MOSFET
MOSFETs 30V N-Channel Enhancement Mode MOSFET
на замовлення 2447 шт:
термін постачання 21-30 дні (днів)