Відгуки про товар
Написати відгук
Технічний опис PJA3400_R1_00001 PanJit
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 4.9A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V.
Інші пропозиції PJA3400_R1_00001 за ціною від 5.40 грн до 24.16 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PJA3400_R1_00001 | PanJit |
 Trans MOSFET N-CH 30V 4.9A 3-Pin SOT-23 T/R |
на замовлення 1170 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
PJA3400_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.9A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V |
на замовлення 4872 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.9A Pulsed drain current: 19.6A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1170 шт: термін постачання 14-30 дні (днів) |
|
| PJA3400_R1_00001 |
|
Виробник: PanJit
Trans MOSFET N-CH 30V 4.9A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 30V 4.9A 3-Pin SOT-23 T/R
на замовлення 1170 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 908+ | 15.61 грн |
| PJA3400_R1_00001 |
|
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
на замовлення 4872 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.08 грн |
| 22+ | 14.13 грн |
| 100+ | 8.85 грн |
| 500+ | 6.15 грн |
| 1000+ | 5.45 грн |
| PJA3400_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1170 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.16 грн |
| 31+ | 13.79 грн |
| 100+ | 8.56 грн |
| 500+ | 6.23 грн |
| 1000+ | 5.40 грн |