PJA3401-AU_R1_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 15 V
Qualification: AEC-Q101
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Технічний опис PJA3401-AU_R1_000A1 Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції PJA3401-AU_R1_000A1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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PJA3401-AU_R1_000A1 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| PJA3401-AU-R1-000A1 | Panjit | MOSFETs SOT23 P CHAN 30V |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
PJA3401-AU_R1_000A1 | Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET, -30 V, -3.6 A |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PJA3401-AU_R1_000A1 | PanJit |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6 Mounting: SMD Polarisation: unipolar Drain current: -3.2A Kind of channel: enhancement Drain-source voltage: -30V Application: automotive industry Type of transistor: P-MOSFET x2 Gate-source voltage: 12V Kind of package: reel; tape Case: SOT23-6 |
товару немає в наявності |
В кошику од. на суму грн. |
| PJA3401-AU_R1_000A1 |
|
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 15 V
Qualification: AEC-Q101
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJA3401-AU-R1-000A1 |
Виробник: Panjit
MOSFETs SOT23 P CHAN 30V
MOSFETs SOT23 P CHAN 30V
товару немає в наявності
В кошику
од. на суму грн.
| PJA3401-AU_R1_000A1 |
|
Виробник: Panjit
MOSFETs 30V P-Channel Enhancement Mode MOSFET, -30 V, -3.6 A
MOSFETs 30V P-Channel Enhancement Mode MOSFET, -30 V, -3.6 A
товару немає в наявності
В кошику
од. на суму грн.
| PJA3401-AU_R1_000A1 |
|
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6
Mounting: SMD
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Application: automotive industry
Type of transistor: P-MOSFET x2
Gate-source voltage: 12V
Kind of package: reel; tape
Case: SOT23-6
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6
Mounting: SMD
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Application: automotive industry
Type of transistor: P-MOSFET x2
Gate-source voltage: 12V
Kind of package: reel; tape
Case: SOT23-6
товару немає в наявності
В кошику
од. на суму грн.