PJA3401_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V
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Технічний опис PJA3401_R1_00001 Panjit International Inc.
Description: SOT-23, MOSFET, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V.
Інші пропозиції PJA3401_R1_00001 за ціною від 7.02 грн до 30.22 грн
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PJA3401_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 1.25W (Ta) |
на замовлення 5375 шт: термін постачання 21-31 дні (днів) |
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PJA3401_R1_00001 | Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET |
на замовлення 3729 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PJA3401_R1_00001 |
|
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Description: SOT-23, MOSFET
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
на замовлення 5375 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.22 грн |
| 17+ | 17.76 грн |
| 100+ | 11.23 грн |
| 500+ | 7.88 грн |
| 1000+ | 7.02 грн |
| PJA3401_R1_00001 |
|
Виробник: Panjit
MOSFETs 30V P-Channel Enhancement Mode MOSFET
MOSFETs 30V P-Channel Enhancement Mode MOSFET
на замовлення 3729 шт:
термін постачання 21-30 дні (днів)