PJA3406_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.30 грн |
| 6000+ | 3.96 грн |
| 9000+ | 3.77 грн |
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Технічний опис PJA3406_R1_00001 Panjit International Inc.
Description: SOT-23, MOSFET, Power Dissipation (Max): 1.25W (Ta), Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції PJA3406_R1_00001 за ціною від 4.23 грн до 34.17 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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PJA3406_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.4A Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 1.25W Gate charge: 5.8nC On-state resistance: 70mΩ Pulsed drain current: 17.6A |
на замовлення 2460 шт: термін постачання 14-30 дні (днів) |
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PJA3406_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 39728 шт: термін постачання 21-31 дні (днів) |
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PJA3406_R1_00001 | Panjit |
MOSFETs 30V N-Channel Enhancement Mode MOSFET |
на замовлення 373771 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PJA3406_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 1.25W
Gate charge: 5.8nC
On-state resistance: 70mΩ
Pulsed drain current: 17.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 1.25W
Gate charge: 5.8nC
On-state resistance: 70mΩ
Pulsed drain current: 17.6A
на замовлення 2460 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.79 грн |
| 36+ | 11.55 грн |
| 100+ | 6.17 грн |
| 500+ | 4.60 грн |
| 1000+ | 4.23 грн |
| PJA3406_R1_00001 |
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Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: SOT-23, MOSFET
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 39728 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.17 грн |
| 14+ | 22.88 грн |
| 100+ | 11.56 грн |
| 500+ | 8.85 грн |
| 1000+ | 6.57 грн |
| PJA3406_R1_00001 |
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Виробник: Panjit
MOSFETs 30V N-Channel Enhancement Mode MOSFET
MOSFETs 30V N-Channel Enhancement Mode MOSFET
на замовлення 373771 шт:
термін постачання 21-30 дні (днів)