PJA3411-AU_R2_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис PJA3411-AU_R2_000A1 Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Grade: Automotive, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції PJA3411-AU_R2_000A1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PJA3411-AU_R2_000A1 | Виробник : Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET |
товару немає в наявності |
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PJA3411-AU-R2-000A1 | Виробник : Panjit |
MOSFETs SOT-23/MOS/SOT/NFET-20TMP |
товару немає в наявності |