PJA3415A-AU_R1_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 16+ | 20.42 грн |
| 24+ | 12.94 грн |
| 100+ | 5.91 грн |
| 500+ | 5.26 грн |
| 1000+ | 4.97 грн |
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Технічний опис PJA3415A-AU_R1_000A1 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції PJA3415A-AU_R1_000A1 за ціною від 3.77 грн до 23.79 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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PJA3415A-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -18A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 88mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 32998 шт: термін постачання 14-30 дні (днів) |
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PJA3415A-AU_R1_000A1 | Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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| PJA3415A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 32998 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 22.63 грн |
| 28+ | 15.55 грн |
| 100+ | 8.24 грн |
| 250+ | 7.40 грн |
| 500+ | 6.89 грн |
| 1000+ | 6.56 грн |
| 3000+ | 5.88 грн |
| 9000+ | 5.80 грн |
| PJA3415A-AU_R1_000A1 |
|
Виробник: Panjit
MOSFETs 30V P-Channel Enhancement Mode MOSFET
MOSFETs 30V P-Channel Enhancement Mode MOSFET
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.79 грн |
| 23+ | 14.29 грн |
| 100+ | 7.82 грн |
| 500+ | 5.80 грн |
| 1000+ | 5.10 грн |
| 3000+ | 4.26 грн |
| 6000+ | 3.77 грн |