PJA3432-AU_R1_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 3.83 грн |
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Технічний опис PJA3432-AU_R1_000A1 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PJA3432-AU_R1_000A1 за ціною від 2.66 грн до 18.26 грн
| Фото | Назва | Виробник | Інформація |
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PJA3432-AU_R1_000A1 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 6.4A Drain current: 1.6A Gate charge: 1.5nC On-state resistance: 570mΩ Power dissipation: 1.25W Gate-source voltage: ±8V Application: automotive industry Kind of channel: enhancement |
на замовлення 1735 шт: термін постачання 14-30 дні (днів) |
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PJA3432-AU_R1_000A1 | Виробник : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3166 шт: термін постачання 21-31 дні (днів) |
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PJA3432-AU_R1_000A1 | Виробник : Panjit |
MOSFETs 30V N-Channel Enhancement Mode MOSFETESD Protected |
на замовлення 22244 шт: термін постачання 21-30 дні (днів) |
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| PJA3432-AU-R1-000A1 | Виробник : Panjit | MOSFET SOT-23/MOS/SOT/NFET-20TMN |
товару немає в наявності |