PJA3435_R1_00001 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Drain current: -500mA
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
On-state resistance: 6Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Drain current: -500mA
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
On-state resistance: 6Ω
Type of transistor: P-MOSFET
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
75+ | 5.2 грн |
85+ | 4.18 грн |
235+ | 3.44 грн |
640+ | 3.26 грн |
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Технічний опис PJA3435_R1_00001 PanJit Semiconductor
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V.
Інші пропозиції PJA3435_R1_00001 за ціною від 3.51 грн до 29.45 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PJA3435_R1_00001 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Mounting: SMD Drain current: -500mA Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: -20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -1A On-state resistance: 6Ω Type of transistor: P-MOSFET кількість в упаковці: 5 шт |
на замовлення 2980 шт: термін постачання 7-14 дні (днів) |
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PJA3435_R1_00001 | Виробник : Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V |
на замовлення 2313 шт: термін постачання 21-31 дні (днів) |
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PJA3435_R1_00001 | Виробник : Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected |
на замовлення 5793 шт: термін постачання 21-30 дні (днів) |
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PJA3435_R1_00001 | Виробник : Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V |
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