PJA3435_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
| Кількість | Ціна |
|---|---|
| 3000+ | 3.76 грн |
| 6000+ | 3.25 грн |
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Технічний опис PJA3435_R1_00001 Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V.
Інші пропозиції PJA3435_R1_00001 за ціною від 3.20 грн до 23.44 грн
| Фото | Назва | Виробник | Інформація |
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PJA3435_R1_00001 | Виробник : Panjit International Inc. |
Description: 20V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V |
на замовлення 8518 шт: термін постачання 21-31 дні (днів) |
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PJA3435_R1_00001 | Виробник : Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected |
на замовлення 4637 шт: термін постачання 21-30 дні (днів) |
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PJA3435_R1_00001 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -500mA Pulsed drain current: -1A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 6Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 5950 шт: термін постачання 14-30 дні (днів) |
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