PJA3436-AU_R1_000A1 PanJit Semiconductor
Виробник: PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.2 грн |
| 95+ | 3.8 грн |
| 250+ | 3.37 грн |
| 255+ | 3.13 грн |
| 705+ | 2.95 грн |
| 3000+ | 2.84 грн |
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Технічний опис PJA3436-AU_R1_000A1 PanJit Semiconductor
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції PJA3436-AU_R1_000A1 за ціною від 2.72 грн до 24.74 грн
| Фото | Назва | Виробник | Інформація |
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PJA3436-AU_R1_000A1 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Mounting: SMD Application: automotive industry Drain current: 1.2A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 4.8A On-state resistance: 0.9Ω Type of transistor: N-MOSFET кількість в упаковці: 5 шт |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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PJA3436-AU_R1_000A1 | Виробник : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 4449 шт: термін постачання 21-31 дні (днів) |
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PJA3436-AU_R1_000A1 | Виробник : Panjit |
MOSFET 20V N-Channel Enhancement Mode MOSFET-ESD Protected |
на замовлення 6181 шт: термін постачання 21-30 дні (днів) |
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PJA3436-AU_R1_000A1 | Виробник : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V Qualification: AEC-Q101 |
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