PJA3436-AU_R1_000A1 Panjit International Inc.
Виробник: Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
Qualification: AEC-Q101
на замовлення 3817 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.90 грн |
| 27+ | 11.50 грн |
| 100+ | 7.17 грн |
| 500+ | 4.94 грн |
| 1000+ | 4.36 грн |
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Технічний опис PJA3436-AU_R1_000A1 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції PJA3436-AU_R1_000A1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PJA3436-AU_R1_000A1 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Drain current: 1.2A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.9nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 4.8A Mounting: SMD Case: SOT23 Drain-source voltage: 20V кількість в упаковці: 1 шт |
товару немає в наявності |
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PJA3436-AU_R1_000A1 | Виробник : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
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PJA3436-AU_R1_000A1 | Виробник : Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected |
товару немає в наявності |
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PJA3436-AU_R1_000A1 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Drain current: 1.2A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.9nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 4.8A Mounting: SMD Case: SOT23 Drain-source voltage: 20V |
товару немає в наявності |