PJA3439-AU_R1_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.24 грн |
| 27+ | 11.27 грн |
| 100+ | 7.04 грн |
| 500+ | 4.86 грн |
| 1000+ | 4.30 грн |
Відгуки про товар
Написати відгук
Технічний опис PJA3439-AU_R1_000A1 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PJA3439-AU_R1_000A1 за ціною від 5.81 грн до 26.61 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PJA3439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -300mA Pulsed drain current: -1A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13Ω Mounting: SMD Gate charge: 1.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 2990 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
PJA3439-AU_R1_000A1 | Panjit |
MOSFETs 60V P-Channel Enhancement Mode MOSFET |
на замовлення 8243 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PJA3439-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -300mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -300mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.61 грн |
| 28+ | 15.24 грн |
| 100+ | 9.21 грн |
| 500+ | 6.62 грн |
| 1000+ | 5.81 грн |
| PJA3439-AU_R1_000A1 |
![]() |
Виробник: Panjit
MOSFETs 60V P-Channel Enhancement Mode MOSFET
MOSFETs 60V P-Channel Enhancement Mode MOSFET
на замовлення 8243 шт:
термін постачання 21-30 дні (днів)




