PJA3441-AU_R1_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 20 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.32 грн |
| 6000+ | 5.51 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
3000 шт
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Технічний опис PJA3441-AU_R1_000A1 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 88mOhm @ 3.1A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції PJA3441-AU_R1_000A1 за ціною від 6.79 грн до 41.26 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PJA3441-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 88mOhm @ 3.1A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 8793 шт: термін постачання 21-31 дні (днів) |
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PJA3441-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.1A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 108mΩ Mounting: SMD Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape Pulsed drain current: -12.4A Gate charge: 6nC |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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| PJA3441-AU_R1_000A1 |
|
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 20 V
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 20 V
Qualification: AEC-Q101
на замовлення 8793 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.31 грн |
| 18+ | 17.31 грн |
| 100+ | 10.90 грн |
| 500+ | 7.63 грн |
| 1000+ | 6.79 грн |
| PJA3441-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -12.4A
Gate charge: 6nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -12.4A
Gate charge: 6nC
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 41.26 грн |