PJA3449_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 299 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.86 грн |
| 6000+ | 5.39 грн |
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Технічний опис PJA3449_R1_00001 Panjit International Inc.
Description: SOT-23, MOSFET, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 299 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 2.1V @ 250µA.
Інші пропозиції PJA3449_R1_00001 за ціною від 6.29 грн до 32.92 грн
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PJA3449_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 299 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
на замовлення 8760 шт: термін постачання 21-31 дні (днів) |
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PJA3449_R1_00001 | Panjit |
MOSFETs 40V P-Channel Enhancement Mode MOSFET |
на замовлення 4658 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PJA3449_R1_00001 |
|
Виробник: Panjit International Inc.
Description: SOT-23, MOSFET
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 299 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: SOT-23, MOSFET
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 299 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
на замовлення 8760 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 14+ | 21.96 грн |
| 100+ | 11.07 грн |
| 500+ | 8.48 грн |
| 1000+ | 6.29 грн |
| PJA3449_R1_00001 |
|
Виробник: Panjit
MOSFETs 40V P-Channel Enhancement Mode MOSFET
MOSFETs 40V P-Channel Enhancement Mode MOSFET
на замовлення 4658 шт:
термін постачання 21-30 дні (днів)