PJB120N03S-AU_R2_002A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 800+ | 80.55 грн |
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Технічний опис PJB120N03S-AU_R2_002A1 Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: TO-263AB, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 250W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V.
Інші пропозиції PJB120N03S-AU_R2_002A1 за ціною від 100.50 грн до 230.01 грн
| Фото | Назва | Виробник | Інформація |
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| PJB120N03S-AU_R2_002A1 | Виробник : Panjit International Inc. |
Description: 30V N-CHANNEL ENHANCEMENT MODE M Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: TO-263AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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PJB120N03S-AU_R2_002A1 | Виробник : Panjit |
MOSFETs 30V N-Channel Enhancement Mode MOSFET, 30 V, 120 A |
товару немає в наявності |
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| PJB120N03S-AU_R2_002A1 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 76A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |