PJB160P04E-AU_R2_002A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Grade: Automotive
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 800+ | 80.00 грн |
Відгуки про товар
Написати відгук
Технічний опис PJB160P04E-AU_R2_002A1 Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M, Grade: Automotive, Supplier Device Package: TO-263AB, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 300W (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 120A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції PJB160P04E-AU_R2_002A1 за ціною від 99.81 грн до 228.44 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PJB160P04E-AU_R2_002A1 | Виробник : Panjit International Inc. |
Description: 40V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
|||||||||
 |
PJB160P04E-AU_R2_002A1 | Виробник : Panjit |
MOSFETs 40V P-Channel Enhancement Mode MOSFET, -40 V, -120 A |
товару немає в наявності |