 
PJC7403_R1_00001 Panjit International Inc.
 Виробник: Panjit International Inc.
                                                Виробник: Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
на замовлення 1232 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна | 
|---|---|
| 14+ | 24.78 грн | 
| 20+ | 16.23 грн | 
| 100+ | 10.87 грн | 
| 500+ | 7.88 грн | 
| 1000+ | 7.11 грн | 
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Технічний опис PJC7403_R1_00001 Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V. 
Інші пропозиції PJC7403_R1_00001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна | 
|---|---|---|---|---|---|
|   | PJC7403_R1_00001 | Виробник : Panjit International Inc. |  Description: 20V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V | товару немає в наявності | |
|   | PJC7403_R1_00001 | Виробник : Panjit |  MOSFET /C03/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-20TAMP/NF20TA-QI01/PJ/// | товару немає в наявності |