PJC7428_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: SOT-323, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.86 грн |
| 9000+ | 3.14 грн |
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Технічний опис PJC7428_R1_00001 Panjit International Inc.
Description: SOT-323, MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 350mW (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Інші пропозиції PJC7428_R1_00001 за ціною від 4.25 грн до 18.99 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PJC7428_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323 Mounting: SMD Pulsed drain current: 0.6A Power dissipation: 0.35W Gate charge: 0.9nC Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: SOT323 On-state resistance: 4Ω |
на замовлення 2750 шт: термін постачання 14-30 дні (днів) |
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PJC7428_R1_00001 | Panjit International Inc. |
Description: SOT-323, MOSFET Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 9938 шт: термін постачання 21-31 дні (днів) |
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PJC7428_R1_00001 | Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET |
на замовлення 3072 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PJC7428_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Gate charge: 0.9nC
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 4Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Gate charge: 0.9nC
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 4Ω
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.41 грн |
| 47+ | 9.14 грн |
| 100+ | 5.77 грн |
| 250+ | 4.86 грн |
| 500+ | 4.27 грн |
| 1000+ | 4.25 грн |
| PJC7428_R1_00001 |
|
Виробник: Panjit International Inc.
Description: SOT-323, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: SOT-323, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 9938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.99 грн |
| 28+ | 11.12 грн |
| 50+ | 7.94 грн |
| 100+ | 6.47 грн |
| 500+ | 4.75 грн |
| PJC7428_R1_00001 |
|
Виробник: Panjit
MOSFETs 30V P-Channel Enhancement Mode MOSFET
MOSFETs 30V P-Channel Enhancement Mode MOSFET
на замовлення 3072 шт:
термін постачання 21-30 дні (днів)