PJD13N10A_L2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 100V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
на замовлення 3780 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.56 грн |
| 11+ | 31.06 грн |
| 100+ | 21.58 грн |
| 500+ | 15.81 грн |
| 1000+ | 12.85 грн |
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Технічний опис PJD13N10A_L2_00001 Panjit International Inc.
Description: 100V N-CHANNEL MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V, Power Dissipation (Max): 2W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V.
Інші пропозиції PJD13N10A_L2_00001
| Фото | Назва | Виробник | Інформація |
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PJD13N10A_L2_00001 | Виробник : Panjit International Inc. |
Description: 100V N-CHANNEL MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V Power Dissipation (Max): 2W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V |
товару немає в наявності |
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PJD13N10A_L2_00001 | Виробник : Panjit |
MOSFETs 100V N-Channel MOSFET |
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PJD13N10A-L2-00001 | Виробник : Panjit |
MOSFET TO-252AA/MOS/TO/NFET-100SMN |
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